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| SI7409DN New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 0.031 @ VGS = - 2.5 V - 8.5 FEATURES ID (A) - 11 rDS(on) (W) 0.019 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D VDS Optimized for Load Switch APPLICATIONS D Load Switch PowerPAKt 1212-8 S 3.30 mm S 1 2 3 S S 3.30 mm G 4 G D 8 7 6 5 D D D D P-Channel MOSFET Bottom View Ordering Information: SI7409DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS - 3.2 3.8 2.0 - 55 to 150 - 7.9 - 30 - 1.3 1.5 0.8 W _C -5 A Symbol VDS VGS 10 secs Steady State - 30 "12 Unit V - 11 -7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72127 S-03372--Rev. A, 03-Mar-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 SI7409DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "12 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 85_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 11 A VGS = - 2.5 V, ID = - 8.5 A VDS = - 15 V, ID = - 11 A IS = - 3.2 A, VGS = 0 V - 30 0.0015 0.025 40 - 0.7 - 1.2 0.019 0.031 - 0.6 - 1.5 "100 -1 -5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 3.2 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 15 V, VGS = - 4.5 V, ID = - 11 A 25 5 9 30 50 115 75 60 45 75 175 115 90 ns 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 25 25 30 Transfer Characteristics I D - Drain Current (A) 20 1.5 V 15 I D - Drain Current (A) 20 15 10 10 TC = 125_C 5 25_C - 55_C 5 1V 0 0 1 2 3 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72127 S-03372--Rev. A, 03-Mar-03 SI7409DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 4000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.024 C - Capacitance (pF) VGS = 2.5 V 3200 0.018 VGS = 4.5 V 0.012 2400 Ciss 1600 0.006 800 Crss Coss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 11 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 11 A 3 r DS(on) - On-Resistance (W) (Normalized) 10 15 20 25 30 4 1.4 1.2 2 1.0 1 0.8 0 0 5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.12 30 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.10 TJ = 150_C 1 On-Resistance vs. Gate-to-Source Voltage 0.08 ID = 11 A 0.06 0.1 0.04 0.01 TJ = 25_C 0.02 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72127 S-03372--Rev. A, 03-Mar-03 www.vishay.com 3 SI7409DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 ID = 250 mA 40 50 Single Pulse Power, Juncion-To-Ambient 0.4 V GS(th) Variance (V) Power (W) 0.2 30 - 0.0 20 - 0.2 10 TA = 25_C Single Pulse - 0.4 - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited IDM Limited 100 ms, 10 ms 10 I D - Drain Current (A) 1 ms 10 ms 1 ID(on) Limited 100 ms 1s 0.1 TA = 25_C Single Pulse 10 s dc, 100 s 0.01 0.1 1 BVDSS Limited 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72127 S-03372--Rev. A, 03-Mar-03 SI7409DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72127 S-03372--Rev. A, 03-Mar-03 www.vishay.com 5 |
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